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Thursday, August 6, 2020 | History

3 edition of A high frequency GaAlAs travelling wave electro-optic modulator at 0.82 [mu]m found in the catalog.

A high frequency GaAlAs travelling wave electro-optic modulator at 0.82 [mu]m

A high frequency GaAlAs travelling wave electro-optic modulator at 0.82 [mu]m

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Published by National Aeronautics and Space Administration, For sale by the National Technical Information Service in [Washington, DC], [Springfield, Va .
Written in English

    Subjects:
  • Gallium arsenide semiconductors.

  • Edition Notes

    StatementChristopher M. Chorey and Altan Ferendeci and Kul B. Bhasin.
    SeriesNASA technical memorandum -- 100970.
    ContributionsFerendeci, A. M., Bhasin, K. B., United States. National Aeronautics and Space Administration.
    The Physical Object
    FormatMicroform
    Pagination1 v.
    ID Numbers
    Open LibraryOL17661310M

    a type of high-frequency electromagnetic wave is discovered by Wilhelm Roentgen is the. x ray frequency modulation. hertz. eelectromagnetic waves travel km//s iin a -- but they only travel -- in glass. vacuum, km/s. The binary biphase modulation is the switching from 0 to 1 and from 1 to 0 accomplished by phase changes of º in the carrier wave. Put another way, at the moments when the value of the code must change from 0 to 1, or from 1 to 0, the change is accomplished by an instantaneous reverse of the phase of the carrier wave.

    The frequency f of the wave is f = ω/2π, ω is the angular frequency. The speed of any periodic wave is the product of its wavelength and frequency. v = λf. The speed of any electromagnetic waves in free space is the speed of light c = 3*10 8 m/s. Electromagnetic waves can have any wavelength λ or frequency f as long as λf = c. A wave will travel only as long as it has _ to carry. For a given wave, if the frequency doubles, the wavelength _ is halved. amplitude modulation, frequency modulation. Each radio station broadcasts on one particular frequency called a _ carrier wave. A cell phone is a _, which means that it can both send and receive messages.

    3) The amplitude of a particular wave is 1 meter. The top-to-bottom distance of the disturbance is A) m. B) 1 m. C) 2 m. D) none of these. 6π t 4z (A/m) Section Wave Polarization Problem An RHC-polarized wave with a modulus of 2 (V/m)is traveling in free space in the negative z-direction. Write down the expression for the wave’s electric field vector, given that the wavelength is 6 cm. y x z ωt=0 ωt=π/2 Figure P Locus of E versus time.


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A high frequency GaAlAs travelling wave electro-optic modulator at 0.82 [mu]m Download PDF EPUB FB2

Get this from a library. A high frequency GaAlAs travelling wave electro-optic modulator at [mu]m. [Christopher M Chorey; A M Ferendeci; K B Bhasin; United States. National Aeronautics and Space Administration.].

A GaAs/GaAlAs traveling-wave directional coupler optical modulator on S.I. GaAs substrates with an epilayer and the coplanar microstrip electrode were designed based on theoretical analysis and. A high frequency GaAlAs travelling wave electro-optic modulator at micrometers.

NASA Technical Reports Server (NTRS) Chorey, Christopher M.; Ferendeci, Altan; Bhasin, Kul B. Experimental GaAlAs modulators operating at micrometers using a Mach-Zehnder interferometer configuration were designed and fabricated.

Coplanar 50 ohm travelling wave. GaAs/A1GaAs Traveling Wave Electro-optic Modulators R. Spickermann, S. Sakamoto, and N. Dagli Department of Electrical and Computer Engineering University of California Santa Barbara, CA ABSTRACT A GaAs/A1GaAs traveling wave Mach-Zehnder electro-optic modulator with novel slow wave electrodes was fabricated on undoped epitaxial layers.

Coplanar 50 ohm travelling wave microwave electrodes were used to obtain a bandwidth length product of GHz-cm. The design, fabrication and dc performance of the GaAlAs travelling wave.

Abstract: A figure of merit is constructed for broad-band electrooptic modulators which compares bandwidth with launched generator voltage standardized to a common wavelength. Comparison of various published results in terms of this figure shows that a lumped-element III-V semiconductor device performance may be no more than a factor of two below that of typical (i.e., LiNbO 3) traveling wave.

High‐speed modulation and switching with gain in a GaAlAs traveling‐wave optical amplifier Appl. Phys. Lett. 45, ( This gives a switch/modulator with modulation depths ofoverall gain, and measured switching speed of many GHz. A cw beam can be modulated at similar gains and speeds and since the device is capable of.

A high frequency GaAlAs travelling wave electro-optic modulator at μm Experimental GaAlAs modulators operating at μm using a Mach. The device has a single waveguide structure combined with travelling-wave, slow-wave electrodes. This design allows for high-speed modulation of the polarization state of light with low differential group delay and low optical loss at frequencies in excess of 50 GHz.

A high frequency GaAlAs travelling wave electro-optic modulator at micrometers Kul B. Bhasin. Experimental GaAlAs modulators operating at micrometers using a Mach-Zehnder. wave electro-optic modulators have been built.

The electro- optic modulation of light can be separated into phase,ld polarization,6*7 intensity,8-‘ 0 and multiquantum well (MQW) modulation. The fundamental emphasis of electro-optic and all-optical modulators is focusing on. 35) Which equations are regarded as wave equations in frequency domain for lossless media.

Maxwell’s b. Lorentz c. Helmholtz d. Poisson’s. ANSWER: Helmholtz. 36) If the magnetic field component of a plane wave in a lossless dielectric is H = 50 sin (2π x 10 6 t – 6x) a z mA/m, what will be the wave velocity.

x 10 6 m/s b. We report a ‐μm GaAs traveling‐wave electro‐optic waveguide modulator with a 3‐dB optical bandwidth in excess of 20 GHz. The bandwidth was determined by directly detecting the modulated optical signal with a high‐speed InP/GaInAs photodiode.

The modulator has a coplanar strip electrode configuration with a double heterojunction Al Ga As/GaAs/Al Ga As. High frequency GaAlAs modulator and photodetector for phased array antenna applications A waveguide Mach-Zehnder electro-optic modulator and an interdigitated photoconductive detector designed to operate at nm, fabricated on different GaAlAs/GaAs heterostructure materials, are being investigated for use in optical interconnects in phased array antenna systems.

A modulation bandwidth of 25 GHz is achieved for a 2 /spl mu/m-wide 30 /spl mu/m-long device. Driving voltage of V is achieved for an extinction ratio of 20 dB for operation at /spl mu/m.

79) Frequency components of an AM wave (m = modulation index) are. Carrier frequency (ω c) with amplitude A b. Upper side band (ω c + ω m) having amplitude mA/2 c.

Lower side band (ω c – ω m) having amplitude mA/2 d. All of the above. ANSWER: (d) All of the above. 80) Squelch circuit is. Suppresses output audio b. Abstract: A design for a velocity-matched traveling-wave directional-coupler intensity modulator in AlGaAs/GaAs is proposed.

The structure utilizes a thin coating of Ta/sub 2/O/sub 5/ on the top of the modulator/electrode structure in order to achieve velocity matching between the optical wave and microwave signal. A new type of high‐speed optical modulator is proposed and demonstrated.

An electric field is applied perpendicular to GaAs/GaAlAs multiple quantum well layers using a ‘‘p‐i‐n’’ diode doping structure of 4‐μm total thickness. The optical absorption edge, which is particularly abrupt because of exciton resonances, shifts to longer wavelengths with increasing field giving almost.

An oceanic depth-sounding vessel surveys the ocean bottom with ultrasonic sound that travels m/s in seawater, and finds a second time delay of the echo to the ocean floor and back. The ocean depth there is a. 15, m. none of the above. Device structure, fabrication method, and experimental results of a GaAs/AlGaAs traveling‐wave directional coupler optical modulator/switch operated at μm wavelength are described for the first time.

An extinction ratio of dB has been measured at the switching voltage of V, and a 3 dB bandwidth of GHz has been demonstrated for a device with a waveguide width of μm. frequency (f) of an electromagnetic wave in free space are related by the speed of light (c) Therefore, if a radio station is broadcasting at a frequency of MHz, the wavelength of its signal is given Wavelength () c cf f or 8 6 10 m/s 3 m 10 cycle/s c f.Frequency modulation.

AM waves. AM signals travel as changes, or modulations, in the amplitude of the wave. Frequency of an AM is constant. Have long wavelengths and low energy. AM radio stations can be broadcast over long distances. Cell Phones transmit and receive signals using high-frequency microwaves 1. Cell phone sends out.VA-9 high frequency low current GaAlAs-GaAs bipolar transistor Published in: IEEE Transactions on Electron Devices (Volume: 28, Issue: 10, Oct ) Article #: Page(s): - Date of Publication: Oct ISSN Information: Print ISSN: Electronic ISSN: